SIHFR9310-GE3

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Mfr.Part #
SIHFR9310-GE3
Manufacturer
Vishay
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET P-CH 400V 1.8A DPAK
Stock
5,525
In Stock :
5,525

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
1.8A
Mounting Type :
Surface Mount
Number of Pins :
3
Factory Lead Time :
8 Weeks
Voltage :
400V
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Packaging :
Tape and Reel (TR)
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Drain to Source Voltage (Vdss) :
400V
Supplier Device Package :
D-PAK (TO-252AA)
RoHS Status :
ROHS3 Compliant
Current :
18A
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation-Max :
50W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Rds On (Max) @ Id, Vgs :
7Ohm @ 1.1A, 10V
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Surface Mount
Max Operating Temperature :
150°C
Min Operating Temperature :
-55°C
Current - Continuous Drain (Id) @ 25°C :
1.8A Tc
Power Dissipation :
50W
Input Capacitance (Ciss) (Max) @ Vds :
270pF @ 25V
FET Type :
P-Channel
Datasheets
SIHFR9310-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIHFR9310-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Voltage:400V, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, SIHFR9310-GE3 pinout, SIHFR9310-GE3 datasheet PDF, SIHFR9310-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIHFR9310-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIHFR9310-GE3


P-Channel Tape & Reel (TR) 7Ohm @ 1.1A, 10V ±20V 270pF @ 25V 13nC @ 10V 400V TO-252-3, DPak (2 Leads + Tab), SC-63

SIHFR9310-GE3 Overview


A device's maximum input capacitance is 270pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 400V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

SIHFR9310-GE3 Features


a continuous drain current (ID) of 1.8A
a 400V drain to source voltage (Vdss)


SIHFR9310-GE3 Applications


There are a lot of Vishay Siliconix
SIHFR9310-GE3 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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