SIHFR1N60A-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

229pF @ 25V

ECCN Code :

EAR99

RoHS Status :

Non-RoHS Compliant

Reach Compliance Code :

Unknown

Power Dissipation :

36W

Configuration :

Single

Number of Pins :

3

Power Dissipation-Max :

36W Tc

Number of Elements :

1

Published :

2016

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

1.4A

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

7 Ω @ 840mA, 10V

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Factory Lead Time :

8 Weeks

Current - Continuous Drain (Id) @ 25°C :

1.4A Tc

Drain to Source Voltage (Vdss) :

600V

Vgs (Max) :

±30V

FET Type :

N-Channel