SIHFL110TR-GE3

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Mfr.Part #
SIHFL110TR-GE3
Manufacturer
Vishay
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
MOSFET N-CH 100V 1.5A SOT223
Stock
2,960
In Stock :
2,960

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tape and Reel (TR)
Min Operating Temperature :
-55°C
Fall Time (Typ) :
9.4 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
540mOhm @ 900mA, 10V
Package / Case :
TO-261-4, TO-261AA
Max Operating Temperature :
150°C
Continuous Drain Current (ID) :
1.5A
Mount :
Surface Mount
Gate to Source Voltage (Vgs) :
20V
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
180pF @ 25V
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
1.5A Tc
Vgs (Max) :
±20V
Factory Lead Time :
8 Weeks
Turn-Off Delay Time :
15 ns
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn On Delay Time :
6.9 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Supplier Device Package :
SOT-223
Gate Charge (Qg) (Max) @ Vgs :
8.3nC @ 10V
Rise Time :
16ns
Mounting Type :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
2W Ta 3.1W Tc
Datasheets
SIHFL110TR-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIHFL110TR-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-261-4, TO-261AA, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, SIHFL110TR-GE3 pinout, SIHFL110TR-GE3 datasheet PDF, SIHFL110TR-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIHFL110TR-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIHFL110TR-GE3


N-Channel Tape & Reel (TR) 540mOhm @ 900mA, 10V ±20V 180pF @ 25V 8.3nC @ 10V 100V TO-261-4, TO-261AA

SIHFL110TR-GE3 Overview


A device's maximal input capacitance is 180pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1.5A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 15 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

SIHFL110TR-GE3 Features


a continuous drain current (ID) of 1.5A
the turn-off delay time is 15 ns
a 100V drain to source voltage (Vdss)


SIHFL110TR-GE3 Applications


There are a lot of Vishay Siliconix
SIHFL110TR-GE3 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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