SIHFL110TR-BE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS :

Details

Drain to Source Voltage (Vdss) :

100 V

FET Feature :

-

Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

8.3 nC @ 10 V

Product Category :

MOSFET

Packaging :

Cut Tape

Power Dissipation (Max) :

2W (Ta), 3.1W (Tc)

Manufacturer :

Vishay

Rds On (Max) @ Id, Vgs :

540mOhm @ 900mA, 10V

Vgs (Max) :

±20V

FET Type :

N-Channel

Base Product Number :

SIHFL110

Input Capacitance (Ciss) (Max) @ Vds :

180 pF @ 25 V

Package / Case :

TO-261-4, TO-261AA

Channel Mode :

Enhancement

Transistor Type :

1 N-Channel

Current - Continuous Drain (Id) @ 25°C :

1.5A (Tc)

Number of Channels :

1 Channel

Mounting Type :

Surface Mount

Brand :

Vishay / Siliconix

Supplier Device Package :

SOT-223

Mounting Style :

SMD/SMT

Rise Time :

16 ns

Minimum Operating Temperature :

- 55 C

Package :

Digi-Reel?

Subcategory :

MOSFETs

Transistor Polarity :

N-Channel

Product Status :

Active

Maximum Operating Temperature :

+ 150 C

Product Type :

MOSFET

Operating Temperature :

-55°C ~ 150°C (TJ)

Series :

-