SIHFBF30S-GE3

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Mfr.Part #
SIHFBF30S-GE3
Manufacturer
Vishay
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CHANNEL 900V
Stock
933
In Stock :
933

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
125
Subcategory :
MOSFETs
Input Capacitance (Ciss) (Max) @ Vds :
1200 pF @ 25 V
Power Dissipation (Max) :
125W (Tc)
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Vgs(th) (Max) @ Id :
4V @ 250µA
Operating Temperature :
-55°C ~ 150°C (TJ)
Packaging :
Reel
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FET Type :
N-Channel
Series :
SiHFBF30S
Mounting Type :
Surface Mount
Product Type :
MOSFET
Rds On (Max) @ Id, Vgs :
3.7Ohm @ 2.2A, 100V
RoHS :
Non-Compliant
Current - Continuous Drain (Id) @ 25°C :
3.6A (Tc)
Gate Charge (Qg) (Max) @ Vgs :
78 nC @ 10 V
Supplier Device Package :
D²PAK (TO-263)
Continuous Drain Current Id :
3.6
Vgs (Max) :
±20V
Product Category :
MOSFET
Manufacturer :
Vishay
Technology :
Si
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
Brand :
Vishay / Siliconix
Channel Type :
N
Drain to Source Voltage (Vdss) :
900 V
Product Status :
Active
Datasheets
SIHFBF30S-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIHFBF30S-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C ~ 150°C (TJ), Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, SIHFBF30S-GE3 pinout, SIHFBF30S-GE3 datasheet PDF, SIHFBF30S-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIHFBF30S-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIHFBF30S-GE3


Si N-Channel Reel 3.7Ohm @ 2.2A, 100V ±20V 1200 pF @ 25 V 78 nC @ 10 V 900 V TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHFBF30S-GE3 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1200 pF @ 25 V.The transistor must receive a 900 V drain to source voltage (Vdss) in order to function.

SIHFBF30S-GE3 Features


a 900 V drain to source voltage (Vdss)


SIHFBF30S-GE3 Applications


There are a lot of Vishay
SIHFBF30S-GE3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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