SIHFB20N50K-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

280W Tc

Package / Case :

TO-220-3

Avalanche Energy Rating (Eas) :

330 mJ

Surface Mount :

No

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

250m Ω @ 12A, 10V

Qualification Status :

Not Qualified

Pbfree Code :

yes

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

20A

RoHS Status :

RoHS Compliant

Terminal Position :

Single

Mounting Type :

Through Hole

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

5V @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

80A

Packaging :

Tube

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Published :

2017

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.25Ohm

DS Breakdown Voltage-Min :

500V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2870pF @ 25V

Drain to Source Voltage (Vdss) :

500V

Vgs (Max) :

±30V

Factory Lead Time :

9 Weeks

FET Type :

N-Channel

Pin Count :

3