SIHFB11N50A-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

500V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-220-3

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

44A

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

500V

Radiation Hardening :

No

Published :

2009

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

170W Tc

Transistor Application :

SWITCHING

Turn-Off Delay Time :

32 ns

Pin Count :

3

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Turn On Delay Time :

14 ns

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.52Ohm

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Mount :

Through Hole

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

11A

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

28 ns

Avalanche Energy Rating (Eas) :

275 mJ

Rise Time :

35ns

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

520m Ω @ 6.6A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1423pF @ 25V