SIHF9630STRL-GE3

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Mfr.Part #
SIHF9630STRL-GE3
Manufacturer
Vishay
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET P-CH 200V 6.5A D2PAK
Stock
111
In Stock :
111

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance :
700pF
Number of Pins :
3
Element Configuration :
Single
Height :
4.83mm
Gate to Source Voltage (Vgs) :
20V
Supplier Device Package :
D2PAK (TO-263)
Input Capacitance (Ciss) (Max) @ Vds :
700pF @ 25V
Continuous Drain Current (ID) :
4A
Rds On (Max) @ Id, Vgs :
800mOhm @ 3.9A, 10V
Factory Lead Time :
8 Weeks
Power Dissipation-Max :
3W Ta 74W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
P-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Max Operating Temperature :
150°C
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
6.5A Tc
Length :
10.67mm
Drain to Source Resistance :
800mOhm
Width :
9.65mm
Mount :
Surface Mount
Turn On Delay Time :
12 ns
Drain to Source Voltage (Vdss) :
200V
Min Operating Temperature :
-55°C
Published :
2014
Mounting Type :
Surface Mount
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Turn-Off Delay Time :
28 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Datasheets
SIHF9630STRL-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIHF9630STRL-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~150°C TJ, SIHF9630STRL-GE3 pinout, SIHF9630STRL-GE3 datasheet PDF, SIHF9630STRL-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIHF9630STRL-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIHF9630STRL-GE3


P-Channel Tape & Reel (TR) 800mOhm @ 3.9A, 10V ±20V 700pF @ 25V 29nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SIHF9630STRL-GE3 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 700pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 28 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 800mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.

SIHF9630STRL-GE3 Features


a continuous drain current (ID) of 4A
the turn-off delay time is 28 ns
single MOSFETs transistor is 800mOhm
a 200V drain to source voltage (Vdss)


SIHF9630STRL-GE3 Applications


There are a lot of Vishay Siliconix
SIHF9630STRL-GE3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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