SIHF8N50L-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain to Source Voltage (Vdss) :

500V

Continuous Drain Current (ID) :

8A

Mount :

Through Hole

Turn-Off Delay Time :

23.6 ns

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

17.3 ns

Package / Case :

TO-220-3 Full Pack

Case Connection :

Isolated

Mounting Type :

Through Hole

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

22A

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Number of Channels :

1

Published :

2016

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

8A

DS Breakdown Voltage-Min :

500V

Pin Count :

3

Pbfree Code :

yes

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

873pF @ 25V

Weight :

6.000006g

Power Dissipation-Max :

40W Tc

Fall Time (Typ) :

17 ns

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

1 Ω @ 4A, 10V

JESD-609 Code :

e3

Rise Time :

35ns

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

1Ohm

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±30V

Number of Pins :

3