SIHF8N50D-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Power Dissipation :

33W

Avalanche Energy Rating (Eas) :

29 mJ

Lead Free :

Lead Free

Length :

10.63mm

Turn On Delay Time :

13 ns

Input Capacitance (Ciss) (Max) @ Vds :

527pF @ 100V

Drain to Source Breakdown Voltage :

500V

Number of Elements :

1

Continuous Drain Current (ID) :

8.7A

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3 Full Pack

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

8.7A Tc

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Turn-Off Delay Time :

17 ns

Operating Temperature :

-55°C~150°C TJ

Published :

2013

Radiation Hardening :

No

Height :

9.8mm

Width :

4.83mm

Rise Time :

16ns

Mount :

Through Hole

Drain-source On Resistance-Max :

0.85Ohm

Rds On (Max) @ Id, Vgs :

850m Ω @ 4A, 10V

FET Type :

N-Channel

Weight :

6.000006g

Fall Time (Typ) :

11 ns

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Number of Channels :

1

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Threshold Voltage :

3V

Case Connection :

Isolated

REACH SVHC :

Unknown

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

33W Tc