SIHF7N60E-GE3
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- Mfr.Part #
- SIHF7N60E-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 600V 7A TO220
- Stock
- 42,400
- In Stock ：
- 42,400
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 680pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 600m Ω @ 3.5A, 10V
- Vgs (Max) :
- ±30V
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Factory Lead Time :
- 18 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- E
- Published :
- 2012
- Packaging :
- Cut Tape (CT)
- RoHS Status :
- Non-RoHS Compliant
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3 Full Pack
- Drain to Source Voltage (Vdss) :
- 600V
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 31W Tc
- Datasheets
- SIHF7N60E-GE3
N-Channel Cut Tape (CT) 600m Ω @ 3.5A, 10V ±30V 680pF @ 100V 40nC @ 10V 600V TO-220-3 Full Pack
SIHF7N60E-GE3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 680pF @ 100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
SIHF7N60E-GE3 Features
a 600V drain to source voltage (Vdss)
SIHF7N60E-GE3 Applications
There are a lot of Vishay Siliconix
SIHF7N60E-GE3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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