SIHF6N65E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

Isolated

Power Dissipation :

31W

Fall Time (Typ) :

20 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

650V

Contact Plating :

Tin

Element Configuration :

Single

Packaging :

Tube

Turn-Off Delay Time :

30 ns

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

7A

Number of Terminations :

3

Drain-source On Resistance-Max :

0.6Ohm

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

600m Ω @ 3A, 10V

Turn On Delay Time :

14 ns

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

18 Weeks

Number of Elements :

1

Avalanche Energy Rating (Eas) :

56 mJ

Vgs (Max) :

±30V

FET Type :

N-Channel

Continuous Drain Current (ID) :

7A

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Rise Time :

12ns

Mount :

Through Hole

Published :

2016

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

820pF @ 100V

Power Dissipation-Max :

31W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

4V @ 250µA