SIHF6N40D-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

4.83mm

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Turn On Delay Time :

12 ns

Drain-source On Resistance-Max :

1Ohm

Rds On (Max) @ Id, Vgs :

1 Ω @ 3A, 10V

Drain Current-Max (Abs) (ID) :

6A

Radiation Hardening :

No

Height :

9.8mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

11ns

Published :

2013

Continuous Drain Current (ID) :

6A

Vgs (Max) :

±30V

Number of Channels :

1

Number of Pins :

3

Mount :

Through Hole

Length :

10.63mm

Number of Terminations :

3

Turn-Off Delay Time :

14 ns

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

8 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

30W

Input Capacitance (Ciss) (Max) @ Vds :

311pF @ 100V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

400V

Weight :

6.000006g

Transistor Application :

SWITCHING

FET Type :

N-Channel

Transistor Element Material :

SILICON

Power Dissipation-Max :

30W Tc

Case Connection :

Isolated

Element Configuration :

Single

Packaging :

Tube

Factory Lead Time :

8 Weeks

Threshold Voltage :

3V

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

5V @ 250μA

REACH SVHC :

Unknown