SIHF640S-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Drain to Source Voltage (Vdss) :

200V

Vgs (Max) :

±20V

Max Operating Temperature :

150°C

Supplier Device Package :

D2PAK (TO-263)

Number of Pins :

3

Factory Lead Time :

8 Weeks

Continuous Drain Current (ID) :

18A

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Number of Elements :

1

Mount :

Surface Mount

Power Dissipation :

130W

Rds On (Max) @ Id, Vgs :

180mOhm @ 11A, 10V

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

3.1W Ta 130W Tc