SIHF5N50D-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

8 Weeks

Length :

10.63mm

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

30W Tc

Case Connection :

Isolated

Package / Case :

TO-220-3 Full Pack

Number of Channels :

1

Transistor Application :

SWITCHING

Turn-Off Delay Time :

14 ns

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Width :

4.83mm

Fall Time (Typ) :

11 ns

Drain to Source Breakdown Voltage :

500V

Input Capacitance (Ciss) (Max) @ Vds :

325pF @ 100V

Threshold Voltage :

3V

Mount :

Through Hole

Published :

2012

Weight :

6.000006g

Radiation Hardening :

No

Continuous Drain Current (ID) :

5.3A

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

REACH SVHC :

Unknown

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Height :

9.8mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

12 ns

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Rise Time :

11ns

Current - Continuous Drain (Id) @ 25°C :

5.3A Tc

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 2.5A, 10V

Vgs (Max) :

±30V

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V