SIHF540S-GE3

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Mfr.Part #
SIHF540S-GE3
Manufacturer
Vishay
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 28A D2PAK
Stock
35,261
In Stock :
35,261

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
77mOhm @ 17A, 10V
Number of Pins :
3
Max Operating Temperature :
175°C
Power Dissipation :
3.7W
Factory Lead Time :
8 Weeks
Current - Continuous Drain (Id) @ 25°C :
28A Tc
Supplier Device Package :
D2PAK (TO-263)
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss) :
100V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs (Max) :
±20V
Number of Elements :
1
Gate to Source Voltage (Vgs) :
20V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
72nC @ 10V
Continuous Drain Current (ID) :
28A
Operating Temperature :
-55°C~175°C TJ
Mounting Type :
Surface Mount
Mount :
Surface Mount
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Input Capacitance (Ciss) (Max) @ Vds :
1700pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
3.7W Ta 150W Tc
Min Operating Temperature :
-55°C
Datasheets
SIHF540S-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIHF540S-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, SIHF540S-GE3 pinout, SIHF540S-GE3 datasheet PDF, SIHF540S-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIHF540S-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIHF540S-GE3


N-Channel 77mOhm @ 17A, 10V ±20V 1700pF @ 25V 72nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SIHF540S-GE3 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1700pF @ 25V.This device conducts a continuous drain current (ID) of 28A, which is the maximum continuous current transistor can conduct.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

SIHF540S-GE3 Features


a continuous drain current (ID) of 28A
a 100V drain to source voltage (Vdss)


SIHF540S-GE3 Applications


There are a lot of Vishay Siliconix
SIHF540S-GE3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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