SIHF35N60EF-GE3
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- Mfr.Part #
- SIHF35N60EF-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 32A TO220
- Stock
- 836
- In Stock ：
- 836
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2568pF @ 100V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 39W Tc
- Drain to Source Voltage (Vdss) :
- 600V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- EF
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 134nC @ 10V
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 97mOhm @ 17A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Package / Case :
- TO-220-3 Full Pack
- Supplier Device Package :
- TO-220 Full Pack
- Packaging :
- Bulk
- Factory Lead Time :
- 21 Weeks
- Mounting Type :
- Through Hole
- Datasheets
- SIHF35N60EF-GE3
N-Channel Bulk 97mOhm @ 17A, 10V ±30V 2568pF @ 100V 134nC @ 10V 600V TO-220-3 Full Pack
SIHF35N60EF-GE3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2568pF @ 100V.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
SIHF35N60EF-GE3 Features
a 600V drain to source voltage (Vdss)
SIHF35N60EF-GE3 Applications
There are a lot of Vishay Siliconix
SIHF35N60EF-GE3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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