SIHF35N60E-GE3
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- Mfr.Part #
- SIHF35N60E-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 600V 32A TO220
- Stock
- 16,428
- In Stock ：
- 16,428
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 94m Ω @ 17A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2760pF @ 100V
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Drain to Source Voltage (Vdss) :
- 600V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-220-3 Full Pack
- Power Dissipation-Max :
- 39W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 132nC @ 10V
- FET Type :
- N-Channel
- Factory Lead Time :
- 18 Weeks
- Series :
- E
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Datasheets
- SIHF35N60E-GE3
N-Channel Tube 94m Ω @ 17A, 10V ±30V 2760pF @ 100V 132nC @ 10V 600V TO-220-3 Full Pack
SIHF35N60E-GE3 Overview
A device's maximal input capacitance is 2760pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
SIHF35N60E-GE3 Features
a 600V drain to source voltage (Vdss)
SIHF35N60E-GE3 Applications
There are a lot of Vishay Siliconix
SIHF35N60E-GE3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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