SIHF30N60E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

65A

Mount :

Through Hole

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

600V

Threshold Voltage :

2V

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 100V

Turn-Off Delay Time :

63 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Factory Lead Time :

14 Weeks

REACH SVHC :

Unknown

Power Dissipation-Max :

37W Tc

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Number of Terminations :

3

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

125m Ω @ 15A, 10V

Packaging :

Tube

Radiation Hardening :

No

Series :

E

Continuous Drain Current (ID) :

29A

Avalanche Energy Rating (Eas) :

690 mJ

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

36 ns

Package / Case :

TO-220-3 Full Pack

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

600V

Rise Time :

32ns

RoHS Status :

ROHS3 Compliant

Published :

2013

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Resistance :

125mOhm

Mounting Type :

Through Hole

Weight :

6.000006g

Element Configuration :

Single

Turn On Delay Time :

19 ns

Lead Free :

Lead Free

Number of Elements :

1