SIHF28N60EF-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

24 ns

Number of Terminations :

3

Factory Lead Time :

21 Weeks

FET Type :

N-Channel

Number of Channels :

1

Pulsed Drain Current-Max (IDM) :

75A

Number of Elements :

1

Weight :

6.000006g

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Rise Time :

40ns

Rds On (Max) @ Id, Vgs :

123m Ω @ 14A, 10V

Turn-Off Delay Time :

82 ns

Transistor Element Material :

SILICON

Package / Case :

TO-220-3 Full Pack

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Case Connection :

Isolated

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Resistance :

123mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

28A

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±30V

JESD-30 Code :

R-PSFM-T3

Drain to Source Breakdown Voltage :

600V

Input Capacitance (Ciss) (Max) @ Vds :

2714pF @ 100V

Published :

2015

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

39W Tc

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Fall Time (Typ) :

39 ns