SIHF23N60E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Channels :

1

FET Type :

N-Channel

REACH SVHC :

Unknown

Lead Free :

Lead Free

Weight :

6.000006g

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

600V

Turn-Off Delay Time :

66 ns

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

2418pF @ 100V

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Turn On Delay Time :

22 ns

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

158m Ω @ 12A, 10V

Packaging :

Tape and Reel (TR)

Package / Case :

TO-220-3 Full Pack

JEDEC-95 Code :

TO-220AB

Drain to Source Voltage (Vdss) :

600V

Number of Elements :

1

Number of Pins :

3

Fall Time (Typ) :

34 ns

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Published :

2016

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

Isolated

Power Dissipation-Max :

35W Tc

Factory Lead Time :

18 Weeks

Radiation Hardening :

No

Rise Time :

38ns

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

23A