SIHF22N65E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Vgs (Max) :

±30V

Power Dissipation :

227W

Rds On (Max) @ Id, Vgs :

180m Ω @ 11A, 10V

Rise Time :

33ns

ECCN Code :

EAR99

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

650V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

REACH SVHC :

Unknown

Packaging :

Tube

Continuous Drain Current (ID) :

22A

Lead Free :

Lead Free

Package / Case :

TO-220-3 Full Pack

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Fall Time (Typ) :

38 ns

RoHS Status :

ROHS3 Compliant

Published :

2016

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Factory Lead Time :

18 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

4V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

2415pF @ 100V

FET Type :

N-Channel

Turn-Off Delay Time :

73 ns

Power Dissipation-Max :

35W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED