SIHF22N60S-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3 Full Pack

Rds On (Max) @ Id, Vgs :

190m Ω @ 11A, 10V

Resistance :

190mOhm

REACH SVHC :

Unknown

Continuous Drain Current (ID) :

22A

Factory Lead Time :

17 Weeks

Radiation Hardening :

No

Number of Terminations :

3

Power Dissipation-Max :

250W Tc

Transistor Application :

SWITCHING

Threshold Voltage :

2V

Turn On Delay Time :

24 ns

Terminal Position :

Single

Published :

2013

Transistor Element Material :

SILICON

Mount :

Through Hole

FET Type :

N-Channel

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Gate to Source Voltage (Vgs) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

68ns

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

59 ns

Drain to Source Breakdown Voltage :

600V

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

690 mJ

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

250W

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

65A

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2810pF @ 25V

Number of Pins :

3

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Pin Count :

3

Turn-Off Delay Time :

77 ns

JESD-609 Code :

e3

JEDEC-95 Code :

TO-220AB

Pbfree Code :

yes