SI7495DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

200ns

Number of Channels :

1

Length :

4.9mm

Width :

5.89mm

Published :

2013

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Fall Time (Typ) :

230 ns

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 21A, 4.5V

Mount :

Surface Mount

Resistance :

6.5mOhm

Drain to Source Breakdown Voltage :

-12V

Height :

1.04mm

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Weight :

506.605978mg

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 5V

Vgs (Max) :

±8V

Series :

TrenchFET®

Terminal Finish :

PURE MATTE TIN

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

12V

Turn-Off Delay Time :

350 ns

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

900mV @ 1mA

FET Type :

P-Channel

Power Dissipation-Max :

1.8W Ta

Turn On Delay Time :

100 ns

Gate to Source Voltage (Vgs) :

8V

Continuous Drain Current (ID) :

13A

Package / Case :

PowerPAK® SO-8

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount