SI7411DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Radiation Hardening :

No

Number of Terminations :

5

JESD-30 Code :

S-XDSO-C5

Transistor Element Material :

SILICON

Series :

TrenchFET®

Vgs (Max) :

±8V

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 4.5V

Pulsed Drain Current-Max (IDM) :

30A

JESD-609 Code :

e3

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Turn On Delay Time :

23 ns

Current - Continuous Drain (Id) @ 25°C :

7.5A Ta

Power Dissipation :

1.5W

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

135 ns

Element Configuration :

Single

Resistance :

19mOhm

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

20V

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

45 ns

Gate to Source Voltage (Vgs) :

8V

Case Connection :

DRAIN

Terminal Form :

C BEND

ECCN Code :

EAR99

Power Dissipation-Max :

1.5W Ta

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

1V @ 300μA

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

7.5A

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

8

Package / Case :

PowerPAK® 1212-8

Rise Time :

45ns

Mount :

Surface Mount

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Published :

2015

Number of Elements :

1

Pin Count :

8

Rds On (Max) @ Id, Vgs :

19m Ω @ 11.4A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)