SI7403BDN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1V @ 250μA

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.074Ohm

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Fall Time (Typ) :

60 ns

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.1W Ta 9.6W Tc

Package / Case :

PowerPAK® 1212-8

Pin Count :

8

Mount :

Surface Mount

Continuous Drain Current (ID) :

-8A

JESD-609 Code :

e3

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

JESD-30 Code :

S-XDSO-C5

Gate to Source Voltage (Vgs) :

8V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 8V

Power Dissipation :

3.1W

Pbfree Code :

yes

Terminal Form :

C BEND

Drain to Source Breakdown Voltage :

-20V

Pulsed Drain Current-Max (IDM) :

20A

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

33 ns

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

5 ns

Series :

TrenchFET®

Operating Mode :

ENHANCEMENT MODE

Rise Time :

51ns

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 10V

Number of Terminations :

5

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Dual

FET Type :

P-Channel

Published :

2016

Drain to Source Voltage (Vdss) :

20V

Radiation Hardening :

No

Element Configuration :

Single

Vgs (Max) :

±8V

Rds On (Max) @ Id, Vgs :

74m Ω @ 5.1A, 4.5V