SI7405BDN-T1-E3
- Mfr.Part #
- SI7405BDN-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® 1212-8
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 16A PPAK 1212-8
- Stock
- 20,809
- In Stock :
- 20,809
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 8
- Continuous Drain Current (ID) :
- 13.5A
- Gate Charge (Qg) (Max) @ Vgs :
- 115nC @ 8V
- Fall Time (Typ) :
- 45 ns
- ECCN Code :
- EAR99
- JESD-30 Code :
- S-XDSO-C5
- Input Capacitance (Ciss) (Max) @ Vds :
- 3500pF @ 6V
- Factory Lead Time :
- 13 Weeks
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 13.5A, 4.5V
- Power Dissipation-Max :
- 3.6W Ta 33W Tc
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- C BEND
- Turn-Off Delay Time :
- 80 ns
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Pulsed Drain Current-Max (IDM) :
- 40A
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±8V
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2016
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Package / Case :
- PowerPAK® 1212-8
- Drain to Source Voltage (Vdss) :
- 12V
- Resistance :
- 13mOhm
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Rise Time :
- 60ns
- Width :
- 3.05mm
- Gate to Source Voltage (Vgs) :
- 8V
- Number of Terminations :
- 5
- Number of Pins :
- 8
- Turn On Delay Time :
- 22 ns
- Series :
- TrenchFET®
- Element Configuration :
- Single
- FET Type :
- P-Channel
- Length :
- 3.05mm
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Case Connection :
- DRAIN
- Lead Free :
- Lead Free
- Height :
- 1.04mm
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- SI7405BDN-T1-E3
P-Channel Tape & Reel (TR) 13m Ω @ 13.5A, 4.5V ±8V 3500pF @ 6V 115nC @ 8V 12V PowerPAK® 1212-8
SI7405BDN-T1-E3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3500pF @ 6V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 80 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 40A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 22 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.The transistor must receive a 12V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).
SI7405BDN-T1-E3 Features
a continuous drain current (ID) of 13.5A
the turn-off delay time is 80 ns
based on its rated peak drain current 40A.
a 12V drain to source voltage (Vdss)
SI7405BDN-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7405BDN-T1-E3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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