SI7407DN-T1-GE3
- Mfr.Part #
- SI7407DN-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® 1212-8
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 9.9A PPAK 1212-8
- Stock
- 20,721
- In Stock :
- 20,721
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 12V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Resistance :
- 12mOhm
- Mount :
- Surface Mount
- Vgs (Max) :
- ±8V
- FET Type :
- P-Channel
- Gate to Source Voltage (Vgs) :
- 8V
- Drain to Source Resistance :
- 12mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 59nC @ 4.5V
- Series :
- TrenchFET®
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 200 ns
- Rds On Max :
- 12 mΩ
- Current - Continuous Drain (Id) @ 25°C :
- 9.9A Ta
- Continuous Drain Current (ID) :
- 9.9A
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Power Dissipation :
- 1.5W
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- PowerPAK® 1212-8
- Drain to Source Breakdown Voltage :
- 12V
- Supplier Device Package :
- PowerPAK® 1212-8
- Power Dissipation-Max :
- 1.5W Ta
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 12mOhm @ 15.6A, 4.5V
- Published :
- 2016
- Min Operating Temperature :
- -55°C
- Vgs(th) (Max) @ Id :
- 1V @ 400μA
- Datasheets
- SI7407DN-T1-GE3
P-Channel Tape & Reel (TR) 12mOhm @ 15.6A, 4.5V ±8V 59nC @ 4.5V 12V PowerPAK® 1212-8
SI7407DN-T1-GE3 Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 9.9A.When VGS=12V, and ID flows to VDS at 12VVDS, the drain-source breakdown voltage is 12V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 200 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 12mOhm.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 12V in order to operate.Using drive voltage (1.8V 4.5V), this device helps reduce its power consumption.
SI7407DN-T1-GE3 Features
a continuous drain current (ID) of 9.9A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 200 ns
single MOSFETs transistor is 12mOhm
a 12V drain to source voltage (Vdss)
SI7407DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7407DN-T1-GE3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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