SI7407DN-T1-GE3

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Mfr.Part #
SI7407DN-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK® 1212-8
Datasheet
Download
Description
MOSFET P-CH 12V 9.9A PPAK 1212-8
Stock
20,721
In Stock :
20,721

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Max Operating Temperature :
150°C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
12V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Resistance :
12mOhm
Mount :
Surface Mount
Vgs (Max) :
±8V
FET Type :
P-Channel
Gate to Source Voltage (Vgs) :
8V
Drain to Source Resistance :
12mOhm
Gate Charge (Qg) (Max) @ Vgs :
59nC @ 4.5V
Series :
TrenchFET®
RoHS Status :
ROHS3 Compliant
Turn-Off Delay Time :
200 ns
Rds On Max :
12 mΩ
Current - Continuous Drain (Id) @ 25°C :
9.9A Ta
Continuous Drain Current (ID) :
9.9A
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Power Dissipation :
1.5W
Packaging :
Tape and Reel (TR)
Package / Case :
PowerPAK® 1212-8
Drain to Source Breakdown Voltage :
12V
Supplier Device Package :
PowerPAK® 1212-8
Power Dissipation-Max :
1.5W Ta
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
12mOhm @ 15.6A, 4.5V
Published :
2016
Min Operating Temperature :
-55°C
Vgs(th) (Max) @ Id :
1V @ 400μA
Datasheets
SI7407DN-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI7407DN-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:PowerPAK® 1212-8, SI7407DN-T1-GE3 pinout, SI7407DN-T1-GE3 datasheet PDF, SI7407DN-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI7407DN-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI7407DN-T1-GE3


P-Channel Tape & Reel (TR) 12mOhm @ 15.6A, 4.5V ±8V 59nC @ 4.5V 12V PowerPAK® 1212-8

SI7407DN-T1-GE3 Overview


Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 9.9A.When VGS=12V, and ID flows to VDS at 12VVDS, the drain-source breakdown voltage is 12V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 200 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 12mOhm.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 12V in order to operate.Using drive voltage (1.8V 4.5V), this device helps reduce its power consumption.

SI7407DN-T1-GE3 Features


a continuous drain current (ID) of 9.9A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 200 ns
single MOSFETs transistor is 12mOhm
a 12V drain to source voltage (Vdss)


SI7407DN-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI7407DN-T1-GE3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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