SI7409ADN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Turn On Delay Time :

30 ns

Peak Reflow Temperature (Cel) :

260

FET Type :

P-Channel

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Terminal Finish :

MATTE TIN

Terminal Position :

Dual

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

40

Gate to Source Voltage (Vgs) :

12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

30V

Drain Current-Max (Abs) (ID) :

7A

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Vgs (Max) :

±12V

Published :

2009

Mount :

Surface Mount

Power Dissipation :

1.5W

Radiation Hardening :

No

Resistance :

19mOhm

Package / Case :

PowerPAK® 1212-8

Pin Count :

8

Terminal Form :

C BEND

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

-30V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Pulsed Drain Current-Max (IDM) :

40A

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

115 ns

Transistor Application :

SWITCHING

Rise Time :

50ns

Element Configuration :

Single

JESD-30 Code :

S-XDSO-C5

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 4.5V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

19m Ω @ 11A, 4.5V

Number of Terminations :

5

Continuous Drain Current (ID) :

-11A

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

1.5W Ta

Fall Time (Typ) :

50 ns

Transistor Element Material :

SILICON