SI7413DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

5

Rise Time :

50ns

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

-13.2A

Pulsed Drain Current-Max (IDM) :

30A

Series :

TrenchFET®

Turn On Delay Time :

30 ns

Power Dissipation :

1.5W

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

15m Ω @ 13.2A, 4.5V

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

Unknown

Terminal Form :

C BEND

Power Dissipation-Max :

1.5W Ta

Vgs(th) (Max) @ Id :

1V @ 400μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

20V

JESD-30 Code :

S-XDSO-C5

FET Type :

P-Channel

Case Connection :

DRAIN

Package / Case :

PowerPAK® 1212-8

Radiation Hardening :

No

Fall Time (Typ) :

50 ns

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±8V

Current - Continuous Drain (Id) @ 25°C :

8.4A Ta

Number of Elements :

1

Turn-Off Delay Time :

200 ns

Time@Peak Reflow Temperature-Max (s) :

40

Threshold Voltage :

-1V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 4.5V

Gate to Source Voltage (Vgs) :

8V

Terminal Position :

Dual

Number of Pins :

8

Pin Count :

8

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Element Configuration :

Single

Lead Free :

Lead Free

Published :

2013

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Mount :

Surface Mount