SI7409ADN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Pulsed Drain Current-Max (IDM) :

40A

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Package / Case :

PowerPAK® 1212-8

Rds On (Max) @ Id, Vgs :

19m Ω @ 11A, 4.5V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2009

Drain to Source Breakdown Voltage :

30V

Drain-source On Resistance-Max :

0.019Ohm

Mounting Type :

Surface Mount

Mount :

Surface Mount

Fall Time (Typ) :

75 ns

Series :

TrenchFET®

Rise Time :

50ns

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

JESD-609 Code :

e3

Turn On Delay Time :

30 ns

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Nominal Vgs :

-1.5 V

JESD-30 Code :

S-XDSO-C5

Terminal Position :

Dual

Vgs (Max) :

±12V

Terminal Form :

C BEND

Continuous Drain Current (ID) :

-11A

Power Dissipation :

1.5W

Packaging :

Tape and Reel (TR)

FET Type :

P-Channel

Turn-Off Delay Time :

115 ns

Number of Terminations :

5

ECCN Code :

EAR99

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

12V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

RoHS Status :

ROHS3 Compliant

REACH SVHC :

Unknown

Case Connection :

DRAIN

Element Configuration :

Single

Power Dissipation-Max :

1.5W Ta

Drain Current-Max (Abs) (ID) :

7A

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 4.5V