SI7413DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

8

Number of Terminations :

5

Terminal Form :

C BEND

Pbfree Code :

yes

Number of Pins :

8

Turn-Off Delay Time :

200 ns

DS Breakdown Voltage-Min :

20V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Dual

Element Configuration :

Single

Turn On Delay Time :

30 ns

Current - Continuous Drain (Id) @ 25°C :

8.4A Ta

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

8V

Pulsed Drain Current-Max (IDM) :

30A

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

1V @ 400μA

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Rise Time :

50ns

FET Type :

P-Channel

Drain-source On Resistance-Max :

0.015Ohm

Operating Temperature :

-55°C~150°C TJ

Package / Case :

PowerPAK® 1212-8

Rds On (Max) @ Id, Vgs :

15m Ω @ 13.2A, 4.5V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Published :

2016

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Vgs (Max) :

±8V

JESD-30 Code :

S-XDSO-C5

Fall Time (Typ) :

50 ns

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.5W Ta

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Continuous Drain Current (ID) :

8.4A