SI7404DN-T1-E3
- Mfr.Part #
- SI7404DN-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® 1212-8
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 8.5A PPAK 1212-8
- Stock
- 22,557
- In Stock :
- 22,557
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 39 ns
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 10V
- Terminal Form :
- C BEND
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.0668mm
- Package / Case :
- PowerPAK® 1212-8
- JESD-30 Code :
- S-XDSO-C5
- Case Connection :
- DRAIN
- Reach Compliance Code :
- Unknown
- Series :
- TrenchFET®
- Pin Count :
- 8
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±12V
- Mount :
- Surface Mount
- Number of Pins :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Resistance :
- 13mOhm
- Rise Time :
- 39ns
- Terminal Position :
- Dual
- Number of Terminations :
- 5
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 13.3A, 10V
- Turn On Delay Time :
- 27 ns
- Published :
- 2009
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 1.5W Ta
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 8.5A
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 8.5A Ta
- Turn-Off Delay Time :
- 64 ns
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 1.5W
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 40A
- Gate to Source Voltage (Vgs) :
- 12V
- Additional Feature :
- FAST SWITCHING
- Mounting Type :
- Surface Mount
- Width :
- 3.1496mm
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 4.5V
- Drain to Source Breakdown Voltage :
- 30V
- JESD-609 Code :
- e3
- Length :
- 3.1496mm
- Datasheets
- SI7404DN-T1-E3
N-Channel Tape & Reel (TR) 13m Ω @ 13.3A, 10V ±12V 30nC @ 4.5V PowerPAK® 1212-8
SI7404DN-T1-E3 Overview
This device has a continuous drain current (ID) of [8.5A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 64 ns.A maximum pulsed drain current of 40A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 27 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.Its overall power consumption can be reduced by using drive voltage (2.5V 10V).
SI7404DN-T1-E3 Features
a continuous drain current (ID) of 8.5A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 64 ns
based on its rated peak drain current 40A.
SI7404DN-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7404DN-T1-E3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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