SI7407DN-T1-E3
- Mfr.Part #
- SI7407DN-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® 1212-8
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 9.9A PPAK 1212-8
- Stock
- 21,927
- In Stock :
- 21,927
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 30 ns
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 12V
- Height :
- 1.04mm
- Drain to Source Resistance :
- 12mOhm
- Power Dissipation :
- 1.5W
- Turn-Off Delay Time :
- 200 ns
- Max Operating Temperature :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2013
- Gate Charge (Qg) (Max) @ Vgs :
- 59nC @ 4.5V
- Vgs (Max) :
- ±8V
- FET Type :
- P-Channel
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Number of Channels :
- 1
- Series :
- TrenchFET®
- Min Operating Temperature :
- -55°C
- Mount :
- Surface Mount
- Number of Pins :
- 8
- Length :
- 3.05mm
- Rise Time :
- 50ns
- Vgs(th) (Max) @ Id :
- 1V @ 400μA
- RoHS Status :
- ROHS3 Compliant
- Rds On Max :
- 12 mΩ
- Width :
- 3.05mm
- Rds On (Max) @ Id, Vgs :
- 12mOhm @ 15.6A, 4.5V
- Power Dissipation-Max :
- 1.5W Ta
- Continuous Drain Current (ID) :
- 9.9A
- Gate to Source Voltage (Vgs) :
- 8V
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- PowerPAK® 1212-8
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 9.9A Ta
- Supplier Device Package :
- PowerPAK® 1212-8
- Number of Elements :
- 1
- Fall Time (Typ) :
- 50 ns
- Datasheets
- SI7407DN-T1-E3
P-Channel Tape & Reel (TR) 12mOhm @ 15.6A, 4.5V ±8V 59nC @ 4.5V 12V PowerPAK® 1212-8
SI7407DN-T1-E3 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 200 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 12mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 30 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.The transistor must receive a 12V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).
SI7407DN-T1-E3 Features
a continuous drain current (ID) of 9.9A
the turn-off delay time is 200 ns
single MOSFETs transistor is 12mOhm
a 12V drain to source voltage (Vdss)
SI7407DN-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7407DN-T1-E3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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