SI7407DN-T1-E3

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Mfr.Part #
SI7407DN-T1-E3
Manufacturer
Vishay
Package / Case
PowerPAK® 1212-8
Datasheet
Download
Description
MOSFET P-CH 12V 9.9A PPAK 1212-8
Stock
21,927
In Stock :
21,927

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Turn On Delay Time :
30 ns
Element Configuration :
Single
Drain to Source Voltage (Vdss) :
12V
Height :
1.04mm
Drain to Source Resistance :
12mOhm
Power Dissipation :
1.5W
Turn-Off Delay Time :
200 ns
Max Operating Temperature :
150°C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2013
Gate Charge (Qg) (Max) @ Vgs :
59nC @ 4.5V
Vgs (Max) :
±8V
FET Type :
P-Channel
Mounting Type :
Surface Mount
Packaging :
Tape and Reel (TR)
Number of Channels :
1
Series :
TrenchFET®
Min Operating Temperature :
-55°C
Mount :
Surface Mount
Number of Pins :
8
Length :
3.05mm
Rise Time :
50ns
Vgs(th) (Max) @ Id :
1V @ 400μA
RoHS Status :
ROHS3 Compliant
Rds On Max :
12 mΩ
Width :
3.05mm
Rds On (Max) @ Id, Vgs :
12mOhm @ 15.6A, 4.5V
Power Dissipation-Max :
1.5W Ta
Continuous Drain Current (ID) :
9.9A
Gate to Source Voltage (Vgs) :
8V
Operating Temperature :
-55°C~150°C TJ
Package / Case :
PowerPAK® 1212-8
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Current - Continuous Drain (Id) @ 25°C :
9.9A Ta
Supplier Device Package :
PowerPAK® 1212-8
Number of Elements :
1
Fall Time (Typ) :
50 ns
Datasheets
SI7407DN-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI7407DN-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Channels:1, Number of Pins:8, Operating Temperature:-55°C~150°C TJ, Package / Case:PowerPAK® 1212-8, SI7407DN-T1-E3 pinout, SI7407DN-T1-E3 datasheet PDF, SI7407DN-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI7407DN-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI7407DN-T1-E3


P-Channel Tape & Reel (TR) 12mOhm @ 15.6A, 4.5V ±8V 59nC @ 4.5V 12V PowerPAK® 1212-8

SI7407DN-T1-E3 Overview


In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 200 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 12mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 30 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.The transistor must receive a 12V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).

SI7407DN-T1-E3 Features


a continuous drain current (ID) of 9.9A
the turn-off delay time is 200 ns
single MOSFETs transistor is 12mOhm
a 12V drain to source voltage (Vdss)


SI7407DN-T1-E3 Applications


There are a lot of Vishay Siliconix
SI7407DN-T1-E3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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