SI7402DN-T1-GE3

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Mfr.Part #
SI7402DN-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK® 1212-8
Datasheet
Download
Description
MOSFET N-CH 12V 13A PPAK 1212-8
Stock
49,761
In Stock :
49,761

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Time@Peak Reflow Temperature-Max (s) :
40
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
TrenchFET®
Vgs(th) (Max) @ Id :
850mV @ 250μA
Transistor Application :
SWITCHING
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Gate to Source Voltage (Vgs) :
8V
Operating Temperature :
-55°C~150°C TJ
JESD-30 Code :
S-XDSO-C5
Terminal Finish :
MATTE TIN
Terminal Form :
C BEND
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Pin Count :
8
Rds On (Max) @ Id, Vgs :
5.7m Ω @ 20A, 4.5V
Number of Terminations :
5
Pulsed Drain Current-Max (IDM) :
50A
Peak Reflow Temperature (Cel) :
260
ECCN Code :
EAR99
Turn-Off Delay Time :
110 ns
Number of Elements :
1
Number of Pins :
8
Turn On Delay Time :
35 ns
Qualification Status :
Not Qualified
Mounting Type :
Surface Mount
Terminal Position :
Dual
Package / Case :
PowerPAK® 1212-8
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
13A Ta
Power Dissipation :
1.5W
Drain-source On Resistance-Max :
0.0057Ohm
Packaging :
Tape and Reel (TR)
Gate Charge (Qg) (Max) @ Vgs :
55nC @ 4.5V
Reach Compliance Code :
Unknown
Vgs (Max) :
±8V
Transistor Element Material :
SILICON
Mount :
Surface Mount
FET Type :
N-Channel
Case Connection :
DRAIN
Power Dissipation-Max :
1.5W Ta
Published :
2013
Drain to Source Breakdown Voltage :
12V
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
13A
Datasheets
SI7402DN-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI7402DN-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:5, Number of Pins:8, Mounting Type:Surface Mount, Package / Case:PowerPAK® 1212-8, SI7402DN-T1-GE3 pinout, SI7402DN-T1-GE3 datasheet PDF, SI7402DN-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI7402DN-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI7402DN-T1-GE3


N-Channel Tape & Reel (TR) 5.7m Ω @ 20A, 4.5V ±8V 55nC @ 4.5V PowerPAK® 1212-8

SI7402DN-T1-GE3 Overview


The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 13A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=12V. And this device has 12V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 110 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 50A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 35 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.

SI7402DN-T1-GE3 Features


a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 50A.


SI7402DN-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI7402DN-T1-GE3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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