SI7402DN-T1-GE3
- Mfr.Part #
- SI7402DN-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® 1212-8
- Datasheet
- Download
- Description
- MOSFET N-CH 12V 13A PPAK 1212-8
- Stock
- 49,761
- In Stock :
- 49,761
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- TrenchFET®
- Vgs(th) (Max) @ Id :
- 850mV @ 250μA
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Gate to Source Voltage (Vgs) :
- 8V
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- S-XDSO-C5
- Terminal Finish :
- MATTE TIN
- Terminal Form :
- C BEND
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Pin Count :
- 8
- Rds On (Max) @ Id, Vgs :
- 5.7m Ω @ 20A, 4.5V
- Number of Terminations :
- 5
- Pulsed Drain Current-Max (IDM) :
- 50A
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 110 ns
- Number of Elements :
- 1
- Number of Pins :
- 8
- Turn On Delay Time :
- 35 ns
- Qualification Status :
- Not Qualified
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Package / Case :
- PowerPAK® 1212-8
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta
- Power Dissipation :
- 1.5W
- Drain-source On Resistance-Max :
- 0.0057Ohm
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 55nC @ 4.5V
- Reach Compliance Code :
- Unknown
- Vgs (Max) :
- ±8V
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 1.5W Ta
- Published :
- 2013
- Drain to Source Breakdown Voltage :
- 12V
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 13A
- Datasheets
- SI7402DN-T1-GE3
N-Channel Tape & Reel (TR) 5.7m Ω @ 20A, 4.5V ±8V 55nC @ 4.5V PowerPAK® 1212-8
SI7402DN-T1-GE3 Overview
The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 13A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=12V. And this device has 12V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 110 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 50A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 35 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.
SI7402DN-T1-GE3 Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 50A.
SI7402DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7402DN-T1-GE3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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