SI7404DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Vgs (Max) :

±12V

Fall Time (Typ) :

33 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Terminal Form :

C BEND

JESD-30 Code :

S-XDSO-C5

Package / Case :

PowerPAK® 1212-8

JESD-609 Code :

e3

Element Configuration :

Single

Number of Pins :

8

Turn-Off Delay Time :

64 ns

RoHS Status :

ROHS3 Compliant

Case Code (Metric) :

1212

Case Connection :

DRAIN

Published :

2015

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

1.5W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

13m Ω @ 13.3A, 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Number of Terminations :

5

DS Breakdown Voltage-Min :

30V

Power Dissipation-Max :

1.5W Ta

Continuous Drain Current (ID) :

8.5A

Transistor Application :

SWITCHING

Mount :

Surface Mount

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Threshold Voltage :

600mV

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 4.5V

Turn On Delay Time :

27 ns

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Radiation Hardening :

No

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

8.5A Ta

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Series :

TrenchFET®

Pulsed Drain Current-Max (IDM) :

40A

Pin Count :

8

Gate to Source Voltage (Vgs) :

12V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Rise Time :

39ns