SI7411DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

S-XDSO-C5

Pulsed Drain Current-Max (IDM) :

30A

Drain to Source Voltage (Vdss) :

20V

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

5

Terminal Form :

C BEND

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Number of Pins :

8

Fall Time (Typ) :

45 ns

Power Dissipation :

1.5W

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 4.5V

Package / Case :

PowerPAK® 1212-8

Continuous Drain Current (ID) :

7.5A

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.5W Ta

Drain to Source Breakdown Voltage :

-20V

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±8V

Rds On (Max) @ Id, Vgs :

19m Ω @ 11.4A, 4.5V

Published :

2015

Current - Continuous Drain (Id) @ 25°C :

7.5A Ta

Mount :

Surface Mount

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Series :

TrenchFET®

Element Configuration :

Single

Terminal Position :

Dual

JESD-609 Code :

e3

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1V @ 300μA

Mounting Type :

Surface Mount

Rise Time :

45ns

Turn On Delay Time :

23 ns

Turn-Off Delay Time :

135 ns

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Gate to Source Voltage (Vgs) :

8V