SI7405BDN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

-12V

Rise Time :

60ns

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

22 ns

Mounting Type :

Surface Mount

JESD-30 Code :

S-XDSO-C5

Terminal Form :

C BEND

ECCN Code :

EAR99

Vgs (Max) :

±8V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

3.6W Ta 33W Tc

RoHS Status :

ROHS3 Compliant

Package / Case :

PowerPAK® 1212-8

Width :

3.05mm

Height :

1.04mm

Terminal Position :

Dual

Number of Terminations :

5

Gate to Source Voltage (Vgs) :

8V

Pulsed Drain Current-Max (IDM) :

40A

Case Connection :

DRAIN

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Gate Charge (Qg) (Max) @ Vgs :

115nC @ 8V

Drain to Source Voltage (Vdss) :

12V

Mount :

Surface Mount

FET Type :

P-Channel

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Power Dissipation :

3.6W

Rds On (Max) @ Id, Vgs :

13m Ω @ 13.5A, 4.5V

Turn-Off Delay Time :

80 ns

Radiation Hardening :

No

Resistance :

13mOhm

Number of Channels :

1

Length :

3.05mm

Continuous Drain Current (ID) :

-16A

Operating Mode :

ENHANCEMENT MODE

Published :

2013

Transistor Element Material :

SILICON

Number of Pins :

8

Fall Time (Typ) :

45 ns

Series :

TrenchFET®

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 6V

Pin Count :

8

Lead Free :

Lead Free

Factory Lead Time :

15 Weeks