SI7402DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Pin Count :

8

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 20A, 4.5V

Terminal Form :

C BEND

ECCN Code :

EAR99

Vgs (Max) :

±8V

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

850mV @ 250μA

Pulsed Drain Current-Max (IDM) :

50A

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Drain to Source Breakdown Voltage :

12V

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

8V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Number of Terminations :

5

Drain-source On Resistance-Max :

0.0057Ohm

JESD-30 Code :

S-XDSO-C5

Fall Time (Typ) :

65 ns

Published :

2015

Package / Case :

PowerPAK® 1212-8

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

FET Type :

N-Channel

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Drain Current (ID) :

13A

Case Connection :

DRAIN

Turn On Delay Time :

35 ns

Turn-Off Delay Time :

110 ns

Power Dissipation-Max :

1.5W Ta

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Dual

Number of Pins :

8

Rise Time :

65ns