SI7491DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

-3V

Transistor Application :

SWITCHING

Turn On Delay Time :

150 ns

Rise Time :

190ns

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

11A

Power Dissipation-Max :

1.8W Ta

JESD-30 Code :

R-XDSO-C5

Lead Free :

Lead Free

Case Connection :

DRAIN

Vgs (Max) :

±20V

Number of Pins :

8

Fall Time (Typ) :

90 ns

Published :

2014

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 5V

Terminal Form :

C BEND

Terminal Finish :

PURE MATTE TIN

Terminal Position :

Dual

ECCN Code :

EAR99

Radiation Hardening :

No

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

50A

Continuous Drain Current (ID) :

18A

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

REACH SVHC :

Unknown

Power Dissipation :

5W

Nominal Vgs :

-3 V

Element Configuration :

Single

Turn-Off Delay Time :

120 ns

Number of Terminations :

5

Drain to Source Breakdown Voltage :

30V

Vgs(th) (Max) @ Id :

3V @ 250µA

Series :

TrenchFET®

Package / Case :

PowerPAK® SO-8

Pbfree Code :

yes

Mounting Type :

Surface Mount

Mount :

Surface Mount

Resistance :

8.5mOhm

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 18A, 10V

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)