SI7491DP-T1-E3
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- Mfr.Part #
- SI7491DP-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 11A PPAK SO-8
- Stock
- 23,421
- In Stock ：
- 23,421
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Threshold Voltage :
- -3V
- Rise Time :
- 190ns
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 1.8W Ta
- REACH SVHC :
- Unknown
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 8
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 190 ns
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 85nC @ 5V
- Pulsed Drain Current-Max (IDM) :
- 50A
- Current - Continuous Drain (Id) @ 25°C :
- 11A Ta
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Nominal Vgs :
- -3 V
- Published :
- 2011
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Matte Tin (Sn)
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Voltage (Vdss) :
- 30V
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- -30V
- FET Type :
- P-Channel
- Pin Count :
- 8
- ECCN Code :
- EAR99
- Package / Case :
- PowerPAK® SO-8
- Series :
- TrenchFET®
- Turn On Delay Time :
- 150 ns
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Turn-Off Delay Time :
- 120 ns
- Resistance :
- 8.5mOhm
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 1.8W
- Terminal Position :
- Dual
- Rds On (Max) @ Id, Vgs :
- 8.5m Ω @ 18A, 10V
- Terminal Form :
- C BEND
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-XDSO-C5
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- -18A
- Number of Terminations :
- 5
- Datasheets
- SI7491DP-T1-E3
P-Channel Tape & Reel (TR) 8.5m Ω @ 18A, 10V ±20V 85nC @ 5V 30V PowerPAK® SO-8
SI7491DP-T1-E3 Overview
Its continuous drain current is -18A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-30V, and this device has a drain-to-source breakdown voltage of -30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 120 ns.Its maximum pulsed drain current is 50A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 150 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -3V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
SI7491DP-T1-E3 Features
a continuous drain current (ID) of -18A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 120 ns
based on its rated peak drain current 50A.
a threshold voltage of -3V
a 30V drain to source voltage (Vdss)
SI7491DP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7491DP-T1-E3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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