SI7489DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn On Delay Time :

15 ns

Radiation Hardening :

No

Lead Free :

Lead Free

Pbfree Code :

yes

Rise Time :

160ns

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Mount :

Surface Mount

Number of Channels :

1

Continuous Drain Current (ID) :

-28A

Series :

TrenchFET®

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Published :

2015

FET Type :

P-Channel

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-F5

Number of Terminations :

5

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Flat

Max Junction Temperature (Tj) :

150°C

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn)

Drain to Source Breakdown Voltage :

-100V

Number of Elements :

1

Weight :

506.605978mg

Power Dissipation-Max :

5.2W Ta 83W Tc

Input Capacitance (Ciss) (Max) @ Vds :

4600pF @ 50V

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Drain to Source Voltage (Vdss) :

100V

Height :

1.12mm

Terminal Position :

Dual

ECCN Code :

EAR99

Length :

4.9mm

Fall Time (Typ) :

100 ns

Nominal Vgs :

-3 V

Package / Case :

PowerPAK® SO-8

Turn-Off Delay Time :

110 ns

Pin Count :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

-3V

Width :

5.89mm

Rds On (Max) @ Id, Vgs :

41m Ω @ 7.8A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

REACH SVHC :

Unknown

Turn On Time-Max (ton) :

55ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

5.2W

Pulsed Drain Current-Max (IDM) :

40A

Factory Lead Time :

14 Weeks