SI7485DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Max Operating Temperature :

150°C

JESD-609 Code :

e3

Nominal Vgs :

-900 mV

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

140 ns

ECCN Code :

EAR99

REACH SVHC :

Unknown

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

7.3m Ω @ 20A, 4.5V

Drain to Source Breakdown Voltage :

-20V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

8V

Min Operating Temperature :

-55°C

Turn-Off Delay Time :

360 ns

JESD-30 Code :

R-XDSO-C5

Max Power Dissipation :

1.8W

Package / Case :

PowerPAK® SO-8

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 5V

Packaging :

Cut Tape (CT)

Radiation Hardening :

No

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

-20A

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

12.5A Ta

Terminal Form :

C BEND

Number of Terminations :

5

Turn On Delay Time :

80 ns

Rise Time :

140ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Published :

2015

Terminal Position :

Dual

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

900mV @ 1mA

Series :

TrenchFET®

Threshold Voltage :

-900mV

Number of Pins :

8

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

20V

Resistance :

7.3mOhm

Drain Current-Max (Abs) (ID) :

12.5A

Mount :

Surface Mount