SI7485DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

900mV @ 1mA

Min Operating Temperature :

-55°C

Terminal Position :

Dual

Turn On Delay Time :

80 ns

Max Power Dissipation :

1.8W

Drain to Source Breakdown Voltage :

20V

Lead Free :

Lead Free

Mount :

Surface Mount

Turn-Off Delay Time :

360 ns

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 5V

Fall Time (Typ) :

170 ns

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Element Configuration :

Single

Continuous Drain Current (ID) :

-20A

Mounting Type :

Surface Mount

Threshold Voltage :

-900mV

Gate to Source Voltage (Vgs) :

8V

Number of Terminations :

5

Nominal Vgs :

-900 mV

Terminal Form :

C BEND

Pin Count :

8

JESD-609 Code :

e3

Rise Time :

140ns

Terminal Finish :

Matte Tin (Sn)

Current :

20A

Time@Peak Reflow Temperature-Max (s) :

40

Case Connection :

DRAIN

Radiation Hardening :

No

Package / Case :

PowerPAK® SO-8

Published :

2011

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

7.3m Ω @ 20A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

12.5A Ta

JESD-30 Code :

R-XDSO-C5

Max Operating Temperature :

150°C

Transistor Application :

SWITCHING

Power Dissipation :

1.8W

Voltage :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

REACH SVHC :

Unknown

Resistance :

7.3mOhm

Number of Pins :

8

Pbfree Code :

yes

Packaging :

Cut Tape (CT)