SI7483ADP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Package / Case :

PowerPAK® SO-8

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Terminal Finish :

MATTE TIN

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

33 ns

FET Type :

P-Channel

Drain to Source Breakdown Voltage :

30V

Series :

TrenchFET®

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 24A, 10V

Continuous Drain Current (ID) :

14A

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Terminal Position :

Dual

JESD-30 Code :

R-XDSO-C5

Mount :

Surface Mount

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0057Ohm

Number of Terminations :

5

Pbfree Code :

yes

Element Configuration :

Single

Power Dissipation-Max :

1.9W Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

C BEND

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Turn On Delay Time :

22 ns

Power Dissipation :

1.9W

ECCN Code :

EAR99

Rise Time :

33ns

Number of Pins :

8

Turn-Off Delay Time :

210 ns

Pulsed Drain Current-Max (IDM) :

60A

Gate to Source Voltage (Vgs) :

20V

Pin Count :

8

Number of Elements :

1

Radiation Hardening :

No

Transistor Element Material :

SILICON

Published :

2016

Moisture Sensitivity Level (MSL) :

1 (Unlimited)