SI7483ADP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Pulsed Drain Current-Max (IDM) :

60A

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2016

Turn-Off Delay Time :

210 ns

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

Pbfree Code :

yes

Turn On Delay Time :

22 ns

Resistance :

5.7mOhm

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

30V

Package / Case :

PowerPAK® SO-8

Fall Time (Typ) :

130 ns

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Power Dissipation :

1.9W

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

5

Pin Count :

8

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-XDSO-C5

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

1.9W Ta

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 24A, 10V

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3V @ 250µA

Continuous Drain Current (ID) :

-24A

Packaging :

Tape and Reel (TR)

Terminal Form :

C BEND

FET Type :

P-Channel

Rise Time :

33ns

Vgs (Max) :

±20V

Mount :

Surface Mount

ECCN Code :

EAR99