SI7478DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Width :

5.89mm

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 20A, 10V

Number of Channels :

1

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Elements :

1

JESD-30 Code :

R-XDSO-C5

Radiation Hardening :

No

Series :

TrenchFET®

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Height :

1.04mm

Threshold Voltage :

3V

Pin Count :

8

Number of Terminations :

5

FET Type :

N-Channel

ECCN Code :

EAR99

Package / Case :

PowerPAK® SO-8

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Fall Time (Typ) :

20 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

PURE MATTE TIN

Drain to Source Breakdown Voltage :

60V

Pulsed Drain Current-Max (IDM) :

60A

Lead Free :

Lead Free

Terminal Form :

C BEND

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

20A

Weight :

506.605978mg

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

Unknown

Nominal Vgs :

3 V

Turn On Delay Time :

25 ns

Turn-Off Delay Time :

115 ns

Power Dissipation :

1.9W

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

1.9W Ta

Factory Lead Time :

14 Weeks

Number of Pins :

8

Rise Time :

20ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Terminal Position :

Dual

Resistance :

7.5mOhm

Length :

4.9mm

Element Configuration :

Single

Published :

2013