SI7476DP-T1-GE3
- Mfr.Part #
- SI7476DP-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 15A PPAK SO-8
- Stock
- 19,186
- In Stock :
- 19,186
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Supplier Device Package :
- PowerPAK® SO-8
- Current - Continuous Drain (Id) @ 25°C :
- 15A Ta
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 130 ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Rds On Max :
- 5.3 mΩ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 40V
- Rds On (Max) @ Id, Vgs :
- 5.3mOhm @ 25A, 10V
- Continuous Drain Current (ID) :
- 25A
- Drain to Source Voltage (Vdss) :
- 40V
- Resistance :
- 5.3mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Resistance :
- 5.3mOhm
- Power Dissipation-Max :
- 1.9W Ta
- Vgs (Max) :
- ±20V
- Published :
- 2016
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Package / Case :
- PowerPAK® SO-8
- FET Type :
- N-Channel
- Series :
- TrenchFET®
- Power Dissipation :
- 1.9W
- Max Operating Temperature :
- 150°C
- Gate Charge (Qg) (Max) @ Vgs :
- 177nC @ 10V
- Min Operating Temperature :
- -55°C
- Datasheets
- SI7476DP-T1-GE3
N-Channel Tape & Reel (TR) 5.3mOhm @ 25A, 10V ±20V 177nC @ 10V 40V PowerPAK® SO-8
SI7476DP-T1-GE3 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40V.As a result of its turn-off delay time, which is 130 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 5.3mOhm.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SI7476DP-T1-GE3 Features
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 130 ns
single MOSFETs transistor is 5.3mOhm
a 40V drain to source voltage (Vdss)
SI7476DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7476DP-T1-GE3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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