SI7476DP-T1-GE3

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Mfr.Part #
SI7476DP-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 40V 15A PPAK SO-8
Stock
19,186
In Stock :
19,186

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Mount :
Surface Mount
Supplier Device Package :
PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C :
15A Ta
Gate to Source Voltage (Vgs) :
20V
Turn-Off Delay Time :
130 ns
Vgs(th) (Max) @ Id :
3V @ 250µA
Rds On Max :
5.3 mΩ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Breakdown Voltage :
40V
Rds On (Max) @ Id, Vgs :
5.3mOhm @ 25A, 10V
Continuous Drain Current (ID) :
25A
Drain to Source Voltage (Vdss) :
40V
Resistance :
5.3mOhm
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Drain to Source Resistance :
5.3mOhm
Power Dissipation-Max :
1.9W Ta
Vgs (Max) :
±20V
Published :
2016
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Surface Mount
Package / Case :
PowerPAK® SO-8
FET Type :
N-Channel
Series :
TrenchFET®
Power Dissipation :
1.9W
Max Operating Temperature :
150°C
Gate Charge (Qg) (Max) @ Vgs :
177nC @ 10V
Min Operating Temperature :
-55°C
Datasheets
SI7476DP-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI7476DP-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:PowerPAK® SO-8, SI7476DP-T1-GE3 pinout, SI7476DP-T1-GE3 datasheet PDF, SI7476DP-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI7476DP-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI7476DP-T1-GE3


N-Channel Tape & Reel (TR) 5.3mOhm @ 25A, 10V ±20V 177nC @ 10V 40V PowerPAK® SO-8

SI7476DP-T1-GE3 Overview


In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40V.As a result of its turn-off delay time, which is 130 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 5.3mOhm.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

SI7476DP-T1-GE3 Features


a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 130 ns
single MOSFETs transistor is 5.3mOhm
a 40V drain to source voltage (Vdss)


SI7476DP-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI7476DP-T1-GE3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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