SI7465DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Power Dissipation-Max :

1.5W Ta

Resistance :

64mOhm

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Height :

1.04mm

Power Dissipation :

1.5W

Case Connection :

DRAIN

Number of Elements :

1

Turn-Off Delay Time :

65 ns

Continuous Drain Current (ID) :

-5A

Drain Current-Max (Abs) (ID) :

3.2A

Package / Case :

PowerPAK® SO-8

Weight :

506.605978mg

Terminal Form :

C BEND

Vgs (Max) :

±20V

Mount :

Surface Mount

Turn On Delay Time :

8 ns

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Factory Lead Time :

14 Weeks

Length :

4.9mm

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

25A

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

Drain to Source Voltage (Vdss) :

60V

Element Configuration :

Single

Number of Terminations :

5

Number of Pins :

8

JESD-30 Code :

R-XDSO-C5

Nominal Vgs :

-3 V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3V @ 250µA

Fall Time (Typ) :

9 ns

Rise Time :

9ns

Number of Channels :

1

Width :

5.89mm

Packaging :

Tape and Reel (TR)

FET Type :

P-Channel

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Published :

2014

Time@Peak Reflow Temperature-Max (s) :

40

Drain to Source Breakdown Voltage :

-60V

Pin Count :

8

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

64m Ω @ 5A, 10V

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

24.2 mJ

Radiation Hardening :

No

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Series :

TrenchFET®

Threshold Voltage :

-3V