SI7465DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Weight :

506.605978mg

Pin Count :

8

Published :

2009

Height :

1.12mm

Continuous Drain Current (ID) :

-5A

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

Power Dissipation :

1.5W

Mount :

Surface Mount

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

24.2 mJ

JESD-30 Code :

R-XDSO-C5

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Pins :

8

Factory Lead Time :

14 Weeks

Series :

TrenchFET®

FET Type :

P-Channel

JESD-609 Code :

e3

Number of Terminations :

5

Pbfree Code :

yes

Vgs (Max) :

±20V

Terminal Form :

C BEND

Element Configuration :

Single

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Turn-Off Delay Time :

65 ns

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Max Junction Temperature (Tj) :

150°C

Pulsed Drain Current-Max (IDM) :

25A

Width :

5.89mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Channels :

1

Drain to Source Voltage (Vdss) :

60V

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

1.5W Ta

Drain Current-Max (Abs) (ID) :

3.2A

Threshold Voltage :

-3V

Length :

4.9mm

Package / Case :

PowerPAK® SO-8

Rise Time :

9ns

Drain to Source Breakdown Voltage :

-60V

Fall Time (Typ) :

9 ns

Number of Elements :

1

Resistance :

64mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

64m Ω @ 5A, 10V

Turn On Delay Time :

8 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V